R3968FD28N SCR DATASHEET
R3968FD28N ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 15 W
Maximum repetitive peak and off-state voltage (VDRM): 30 V
Maximum average on-state current (IT(AVR)): 1 A
Maximum RMS on-state current (IT(RMS)): 1.6 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 6.7 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 20 mA
Package: TO220AB
R3968FD28N Datasheet
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Description
Date:- 17 Oct 2007 Data Sheet Issue:- 3 WESTCODE An IXYS Company Provisional Data Distributed Gate Thyristor Types R3968F#20x to R3968F#28x Development Type Number: RX075F#20x-28x Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 2000-2800 V DRM V Non-repetitive peak off-state voltage, (note 1) 2000-2800 V DSM V Repetitive peak reverse voltage, (note 1) 2000-2800 V RRM VRSM Non-repetitive peak reverse voltage, (note 1
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |