S0300SR12Y SCR DATASHEET
S0300SR12Y ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 15 W
Maximum repetitive peak and off-state voltage (VDRM): 30 V
Maximum average on-state current (IT(AVR)): 2.5 A
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 45 K/W
Junction to case thermal resistance (RTH(j-c)): 5.6 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 20 mA
S0300SR12Y Datasheet
Page #1
Page #2
Description
Date:- 16 Dec, 2011 Data Sheet Issue:- A1 WESTCODE An IXYS Company Provisional Data Symmetrical Gate Turn-Off Thyristor Types S0300SR12# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1300 V VDC-link Maximum continuous DC-link voltage 600 V VRRM Repetitive peak reverse voltage 960 V VRSM Non-repetitive peak reverse voltage 960 V MAXIMUM R
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |