S0308F1 SCR DATASHEET
S0308F1 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 30 V
Maximum average on-state current (IT(AVR)): 6.4 A
Maximum RMS on-state current (IT(RMS)): 10 A
Non repetitive surge peak on-state current (ITSM): 83 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 175 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 3.4 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 15 mA
Holding current (IH): 30 mA
S0308F1 Datasheet
Page #1
Page #2
Description
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |