S1006L SCR Spec
S1006L ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 100 V
Maximum average on-state current (IT(AVR)): 5.1 A
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 60 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 175 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 40 K/W
Junction to case thermal resistance (RTH(j-c)): 2.1 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 15 mA
Holding current (IH): 30 mA
Package: TO220AB
S1006L Spec
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