All Transistors. SCR. S1012R Datasheet

 

S1012R SCR DATASHEET

S1012R ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 15 W
   Maximum repetitive peak and off-state voltage (VDRM): 100 V
   Maximum average on-state current (IT(AVR)): 0.64 A
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 145 K/W
   Junction to case thermal resistance (RTH(j-c)): 50 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 30 mA
   Holding current (IH): 20 mA

Package: TO‑92

 

S1012R Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S1012R Datasheet

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S1012R
 datasheet

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S1012R
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