S1200NC20Y SCR DATASHEET
S1200NC20Y ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 120 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
Triggering gate voltage (VGT): 0.65 V
Peak on-state voltage drop (VTM): 2.2 V
Triggering gate current (IGT): 8 mA
Holding current (IH): 20 mA
Package: TO‑220AB
S1200NC20Y Datasheet
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Description
Date:- 8 Apr, 2005 Data Sheet Issue:- 3 WESTCODE An IXYS Company Symmetrical Gate Turn-Off Thyristor Type S1200NC25# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS V Repetitive peak off-state voltage, (note 1). 2500 V DRM VRSM Non-repetitive peak off-state voltage, (note 1). 2600 V V Repetitive peak reverse voltage. 100-2000 V RRM V Non-repetitive peak reverse voltage. 100-2000 V RSM MAXIMUM RATINGS LIMITS UNITS I Maximum peak turn-off current, (note 2). 1200
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |