S1200NC25D SCR DATASHEET
S1200NC25D ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
Triggering gate voltage (VGT): 0.65 V
Peak on-state voltage drop (VTM): 2.2 V
Triggering gate current (IGT): 4 mA
Holding current (IH): 10 mA
Package: TO‑220AB
S1200NC25D Datasheet
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Description
Date:- 8 Apr, 2005 Data Sheet Issue:- 3 WESTCODE An IXYS Company Symmetrical Gate Turn-Off Thyristor Type S1200NC25# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS V Repetitive peak off-state voltage, (note 1). 2500 V DRM VRSM Non-repetitive peak off-state voltage, (note 1). 2600 V V Repetitive peak reverse voltage. 100-2000 V RRM V Non-repetitive peak reverse voltage. 100-2000 V RSM MAXIMUM RATINGS LIMITS UNITS I Maximum peak turn-off current, (note 2). 1200
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