S12M15600B SCR-module DATASHEET

S12M15600B ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1400 V
   Maximum average on-state current (I_T(AVR)): 15 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.4 K/W

 

S12M15600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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S12M15600B Datasheet

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Description

LITE-ON S12M15600B SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 12 AMPERES RMS Reverse Blocking Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L DIM. MIN. MAX. Blocking Voltage to 600 Volts M A C 14.22 15.88 On-State Current Rating of 12 Amperes RMS at 80℃ D B 9.65 10.67 Rugged, Economical TO220AB Package C 2.54 3.43 A K Glass Passivated Junctions for Reliability and Uniformity D 5.84 6.86 E Minimum and Maximum Values of IGT, VGT an IH