S12M8-600B SCR-module DATASHEET

S12M8-600B ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 15 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.4 K/W

S12M8-600B Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

S12M8-600B Datasheet

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Description

LITE-ON S12M8-600B SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 12 AMPERES RMS Reverse Blocking Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage to 600 Volts DIM. MIN. MAX. M A C 14.22 15.88 High Surge Current Capability - 100 Amperes D B 9.65 10.67 On-State Current Rating of 12 Amperes RMS at 80℃ C A 2.54 3.43 K Rugged, Economical TO220AB Package D 5.84 6.86 E Glass Passivated Junctions for Reliability and Uniformity P

LIST

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. S12M8-600B Datasheet