S1PHB55-08 SCR-module DATASHEET
S1PHB55-08 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 55 A
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.9 K/W
S1PHB55-08 Datasheet
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Description
S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V S1PHB55-08 900 800 S1PHB55-12 1300 1200 S1PHB55-14 1500 1400 S1PHB55-16 1700 1600 S1PHB55-18 1900 1800 Symbol Test Conditions Maximum Ratings Unit IdAV TK=85oC, module 55 A IdAVM module 55 IFRMS, ITRMS per leg 41 TVJ=45oC t=10ms (50Hz), sine 550 VR=0 t=8.3ms (60Hz), sine 600 ITSM, IFSM A TVJ=TVJM t=10ms(50Hz), sine 500 VR=0 t=8.3ms(60Hz), sine 5
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |