S1PHB55-16 SCR DATASHEET

S1PHB55-16 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 150 K/W
   Junction to case thermal resistance (R_TH(j-c)): 75 K/W
   Triggering gate voltage (V_GT): 0.62 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 0.02 mA
   Holding current (I_H): 0.5 mA

Package: TO‑92

 

S1PHB55-16 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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S1PHB55-16 Datasheet

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Description

S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V S1PHB55-08 900 800 S1PHB55-12 1300 1200 S1PHB55-14 1500 1400 S1PHB55-16 1700 1600 S1PHB55-18 1900 1800 Symbol Test Conditions Maximum Ratings Unit IdAV TK=85oC, module 55 A IdAVM module 55 IFRMS, ITRMS per leg 41 TVJ=45oC t=10ms (50Hz), sine 550 VR=0 t=8.3ms (60Hz), sine 600 ITSM, IFSM A TVJ=TVJM t=10ms(50Hz), sine 500 VR=0 t=8.3ms(60Hz), sine 5