S1U50100A SCR DATASHEET
S1U50100A ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 1 A
Non repetitive surge peak on-state current (ITSM): 10 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
Junction to case thermal resistance (RTH(j-c)): 75 K/W
Triggering gate voltage (VGT): 0.62 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 0.02 mA
Holding current (IH): 0.5 mA
Package: TO‑92
S1U50100A Datasheet
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Description
LITE-ON S1U50-A SERIES SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 1 AMPERES RMS Reverse Blocking Thyristors 100 thru 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other TO-92 Logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 4.45 4.70 On– State Current Rating of 0.8 Amperes RMS at 80℃ B 4.32 5.33 High Surge Current Capability — 10 Amperes Minimum and Maximum Values of IGT, VGT and IH S
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |