All Transistors. SCR. S1U50100A Datasheet

 

S1U50100A SCR DATASHEET

S1U50100A ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
   Junction to case thermal resistance (RTH(j-c)): 75 K/W
   Triggering gate voltage (VGT): 0.62 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 0.02 mA
   Holding current (IH): 0.5 mA

Package: TO‑92

 

S1U50100A Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S1U50100A Datasheet

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S1U50100A
 datasheet

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S1U50100A
 datasheet #2

Description

LITE-ON S1U50-A SERIES SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 1 AMPERES RMS Reverse Blocking Thyristors 100 thru 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other TO-92 Logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 4.45 4.70 On– State Current Rating of 0.8 Amperes RMS at 80℃ B 4.32 5.33 High Surge Current Capability — 10 Amperes Minimum and Maximum Values of IGT, VGT and IH S

 
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