S1U50400A SCR DATASHEET

S1U50400A ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1.5 A
   Non repetitive surge peak on-state current (I_TSM): 15 A
   Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 160 K/W
   Junction to case thermal resistance (R_TH(j-c)): 50 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 0.03 mA
   Holding current (I_H): 2 mA

Package: TO‑92

 

S1U50400A Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

S1U50400A Datasheet

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Description

LITE-ON S1U50-A SERIES SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 1 AMPERES RMS Reverse Blocking Thyristors 100 thru 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other TO-92 Logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 4.45 4.70 On– State Current Rating of 0.8 Amperes RMS at 80℃ B 4.32 5.33 High Surge Current Capability — 10 Amperes Minimum and Maximum Values of IGT, VGT and IH S