S1VM02-600A SCR DATASHEET

S1VM02-600A ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum average on-state current (I_T(AVR)): 2.5 A
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to case thermal resistance (R_TH(j-c)): 3 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 0.05 mA
   Holding current (I_H): 4 mA

Package: TO252

S1VM02-600A Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

S1VM02-600A Datasheet

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Description

LITE-ON S1VM02-600A SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 1.5 AMPERES RMS Reverse Blocking Thyristors 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other TO-92 Logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 4.45 4.70 On– State Current Rating of 1.5 Amperes RMS at Tc=80℃ B 4.32 5.33 High Surge Current Capability — 15 Amperes Glass-Passivated Surface for Reliability and Uniformity

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. S1VM02-600A Datasheet