All Transistors. SCR. S2800B Datasheet

 

S2800B SCR DATASHEET

S2800B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 500 V
   Maximum average on-state current (IT(AVR)): 6.4 A
   Maximum RMS on-state current (IT(RMS)): 10 A
   Non repetitive surge peak on-state current (ITSM): 85 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.9 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 15 mA
   Holding current (IH): 20 mA

Package: TO220AB

 

S2800B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S2800B Datasheet

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S2800B
 datasheet

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S2800B
 datasheet #2

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