All Transistors. SCR. S4008R Datasheet

 

S4008R SCR DATASHEET

S4008R ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 1 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 6.4 A
   Maximum RMS on-state current (IT(RMS)): 10 A
   Non repetitive surge peak on-state current (ITSM): 83 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to case thermal resistance (RTH(j-c)): 1.45 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 6 mA

Package: TO252

 

S4008R Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S4008R Datasheet

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S4008R
 datasheet

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S4008R
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