S4008R SCR DATASHEET
S4008R ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 6.4 A
Maximum RMS on-state current (IT(RMS)): 10 A
Non repetitive surge peak on-state current (ITSM): 83 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to case thermal resistance (RTH(j-c)): 1.45 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 6 mA
Package: TO252
S4008R Datasheet
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |