All Transistors. SCR. S401E Datasheet

 

S401E SCR DATASHEET

S401E ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 35 mA
   Holding current (IH): 50 mA

Package: TO‑263

 

S401E Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S401E Datasheet

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S401E
 datasheet

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S401E
 datasheet #2

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