S4065J SCR DATASHEET
S4065J ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
Junction to case thermal resistance (RTH(j-c)): 7 K/W
Triggering gate voltage (VGT): 1 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 5 mA
Package: TO‑225
S4065J Datasheet
Page #1
Page #2
Description
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |