S6004F1 SCR Spec
S6004F1 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 2.5 A
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 85 K/W
Junction to case thermal resistance (RTH(j-c)): 3.8 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 6 mA
Package: TO251
S6004F1 Spec
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