S6006DS2G SCR DATASHEET

S6006DS2G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 3.8 A
   Maximum RMS on-state current (I_T(RMS)): 6 A
   Non repetitive surge peak on-state current (I_TSM): 83 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 8 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to case thermal resistance (R_TH(j-c)): 4.3 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 6 mA

Package: TO202

 

S6006DS2G Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

S6006DS2G Datasheet

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Description

S6006DS2G SCRs Simplified outline TO-252 Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Features • Blocking voltage to 600 V • a On-state RMS current to 6 A k • Ultra low gate trigger current g Description Pi