All Transistors. SCR. S6012L Datasheet

 

S6012L SCR DATASHEET

S6012L ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 30 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum average on-state current (IT(AVR)): 9.5 A
   Maximum RMS on-state current (IT(RMS)): 15 A
   Non repetitive surge peak on-state current (ITSM): 188 A
   Critical repetitive rate of rise of on-state current (dI/dt): 125 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 150 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.95 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 30 mA
   Holding current (IH): 40 mA

Package: TO220AB

 

S6012L Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S6012L Datasheet

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S6012L
 datasheet

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S6012L
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