S6065P SCR Spec
S6065P ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 0.51 A
Maximum RMS on-state current (IT(RMS)): 0.8 A
Non repetitive surge peak on-state current (ITSM): 16 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to case thermal resistance (RTH(j-c)): 60 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 0.012 mA
Holding current (IH): 5 mA
S6065P Spec
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