All Transistors. SCR. S6S3 Datasheet

 

S6S3 SCR DATASHEET

S6S3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 35 mA
   Holding current (IH): 50 mA

Package: TO‑263

 

S6S3 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

S6S3 Datasheet

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S6S3
 datasheet

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S6S3
 datasheet #2

Description

E5 TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-251 AK TO-252 V-Pak D-Pak G Sensitive SCRs RoHS (0.8 A to 10 A) E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccor's line of power SCRs. This group of Features packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to 500 µA. For gate currents in the • RoHS

 
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