S8M02-600B SCR-module DATASHEET

S8M02-600B ELECTRICAL SPECIFICATIONS

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 500 A

S8M02-600B Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

S8M02-600B Datasheet

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Description

LITE-ON S8M02-B SERIES SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 8 AMPERES RMS Reverse Blocking Thyristors 600 thru VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage to 600 Volts DIM. MIN. MAX. M A On-State Current Rating of 8 Amperes RMS at 80℃ C 14.22 15.88 D B 9.65 10.67 High Surge Current Capability - 80 Amperes C A 2.54 3.43 Rugged, Economical TO220AB Package K D 5.84 6.86 Glass Passivated Junctions for Reliability and Uniformit

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. S8M02-600B Datasheet