SCR0840 Triac DATASHEET
SCR0840 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 38 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 80 K/W
Junction to case thermal resistance (RTH(j-c)): 5.2 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 30 mA
Holding current (IH): 40 mA
Package: TO‑225
SCR0840 Datasheet
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Description
SCR0840 Sensitive Gate SCRs 400V, 0.8A Sensitive Gate SCRs Features Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current : IT(RMS)=0.8A Low On-state Voltage : VTM=1.2V(Typ.) General Description PNPN devices designed for high volume, line-powered TO-92 consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, Product Characteristics and sensing and detection circuits. Supplied in an in- IT(RMS) 0.
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |