SDT165GK12 SCR-module DATASHEET

SDT165GK12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1800 V
   Maximum average on-state current (I_T(AVR)): 165 A
   Maximum RMS on-state current (I_T(RMS)): 300 A
   Non repetitive surge peak on-state current (I_TSM): 6000 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.15 K/W

 

SDT165GK12 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SDT165GK12 Datasheet

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Description

STD/SDT165 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STD/SDT165GK08 900 800 STD/SDT165GK12 1300 1200 STD/SDT165GK14 1500 1400 STD/SDT165GK16 1700 1600 STD/SDT165GK18 1900 1800 STD/SDT165GK20 2100 2000 STD/SDT165GK22 2300 2200 Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS TVJ=TVJM 300 A ITAVM, IFAVM TC=85oC; 180o sine 165 TVJ=45oC t=10ms (50Hz), sine 6000 VR=0 t=8.3ms (60Hz), sine 6400 ITSM, IFSM A