SDT60GK12 SCR-module DATASHEET

SDT60GK12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1800 V
   Maximum average on-state current (I_T(AVR)): 60 A
   Maximum RMS on-state current (I_T(RMS)): 100 A
   Non repetitive surge peak on-state current (I_TSM): 1500 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.45 K/W

 

SDT60GK12 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SDT60GK12 Datasheet

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Description

STD/SDT60 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STD/SDT60GK08 900 800 STD/SDT60GK12 1300 1200 STD/SDT60GK14 1500 1400 STD/SDT60GK16 1700 1600 STD/SDT60GK18 1900 1800 Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS TVJ=TVJM 100 A ITAVM, IFAVM TC=85oC; 180o sine 60 TVJ=45oC t=10ms (50Hz), sine 1500 VR=0 t=8.3ms (60Hz), sine 1600 ITSM, IFSM A TVJ=TVJM t=10ms(50Hz), sine 1350 VR=0 t=8.3ms(60Hz), sin