SDT90GK18 SCR-module DATASHEET
SDT90GK18 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 170 A
Non repetitive surge peak on-state current (ITSM): 5400 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..130 °C
Junction to case thermal resistance (RTH(j-c)): 0.18 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 150 mA
SDT90GK18 Datasheet
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Description
STD/SDT90 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STD/SDT90GK08 900 800 STD/SDT90GK12 1300 1200 STD/SDT90GK14 1500 1400 STD/SDT90GK16 1700 1600 STD/SDT90GK18 1900 1800 STD/SDT90GK20 2100 2000 Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS TVJ=TVJM 180 A ITAVM, IFAVM TC=85oC; 180o sine 90 TVJ=45oC t=10ms (50Hz), sine 1700 VR=0 t=8.3ms (60Hz), sine 1800 ITSM, IFSM A TVJ=TVJM t=10ms(50Hz), sine 1540
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |