SF10G48 SCR DATASHEET

SF10G48 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 100 V
   Maximum average on-state current (I_T(AVR)): 2 A
   Maximum RMS on-state current (I_T(RMS)): 3.1 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 15 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 12 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 3 mA

Package: TO202

 

SF10G48 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SF10G48 Datasheet

Page #1

Page #2

Description

SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48,SF10J48,USF10G48,USF10J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : V = 400,600V RRM Average On-State Current : I = 10A T (AV) Gate Trigger Current : IGT = 10mA MAX. Unit: mm SF10G48·SF10J48 USF10G48·USF10J48 JEDEC ― JEDEC ― JEITA ― JEITA ― TOSHIBA 13-10J1B TOSHIBA 13-10J2B Weight: 1.7g MAR