SF10J48 SCR DATASHEET
SF10J48 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 2 A
Maximum RMS on-state current (IT(RMS)): 3.1 A
Non repetitive surge peak on-state current (ITSM): 20 A
Critical rate of rise of off-state voltage (dV/dt): 15 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 12 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 3 mA
Package: TO202
SF10J48 Datasheet
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Description
SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48,SF10J48,USF10G48,USF10J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : V = 400,600V RRM Average On-State Current : I = 10A T (AV) Gate Trigger Current : IGT = 10mA MAX. Unit: mm SF10G48·SF10J48 USF10G48·USF10J48 JEDEC ― JEDEC ― JEITA ― JEITA ― TOSHIBA 13-10J1B TOSHIBA 13-10J2B Weight: 1.7g MAR
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |