All Transistors. SCR. SF10J48 Datasheet

 

SF10J48 SCR DATASHEET

SF10J48 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum average on-state current (IT(AVR)): 2 A
   Maximum RMS on-state current (IT(RMS)): 3.1 A
   Non repetitive surge peak on-state current (ITSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 15 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 12 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 3 mA

Package: TO202

 

SF10J48 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

SF10J48 Datasheet

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SF10J48
 datasheet

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SF10J48
 datasheet #2

Description

SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48,SF10J48,USF10G48,USF10J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : V = 400,600V RRM Average On-State Current : I = 10A T (AV) Gate Trigger Current : IGT = 10mA MAX. Unit: mm SF10G48·SF10J48 USF10G48·USF10J48 JEDEC ― JEDEC ― JEITA ― JEITA ― TOSHIBA 13-10J1B TOSHIBA 13-10J2B Weight: 1.7g MAR

 
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