SF16JZ51 SCR DATASHEET

SF16JZ51 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 2 A
   Maximum RMS on-state current (I_T(RMS)): 3.1 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 15 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 12 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 3 mA

Package: TO202

 

SF16JZ51 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SF16JZ51 Datasheet

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Description

isc Thyristors SF16JZ51 DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 600 V DRM V Repetitive peak reverse voltage 600 V RRM I Average forward current @Tc=79℃ 16