SF5G49 SCR DATASHEET

SF5G49 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 8 A
   Maximum RMS on-state current (I_T(RMS)): 12.6 A
   Non repetitive surge peak on-state current (I_TSM): 120 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.8 K/W
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 40 mA

Package: TO‑262

 

SF5G49 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SF5G49 Datasheet

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Description

SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 Medium Power Control Applications Unit: mm • Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: V = 400, 600 V RRM • Average on-state current: I = 5 A T (AV) • Gate trigger current: IGT = 70 µA max Maximum Ratings Characteristics Symbol Rating Unit SF5G49 Repetitive peak off-state 400 USF5G49 voltage and Repetitive VDRM