SF5J48 SCR DATASHEET
SF5J48 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 8 A
Maximum RMS on-state current (IT(RMS)): 12.6 A
Non repetitive surge peak on-state current (ITSM): 120 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 2.8 K/W
Triggering gate voltage (VGT): 1 V
Peak on-state voltage drop (VTM): 1.5 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 40 mA
Package: TO‑262
SF5J48 Datasheet
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Description
SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : V = 400, 600V DRM Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On-State Current : I = 5A T (AV) Gate Trigger Current : I = 10mA Max. GT Unit: mm SF5G48·SF5J48 USF5G48·USF5J48 JEDEC ― JEDEC ― JEITA ― JEITA ― TOSHIBA 13-10J1B TOSHIBA 13-10J2B Weight: 1.7g MARKING F5G
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |