All Transistors. SCR. SK120KQ16 Datasheet

 

SK120KQ16 SCR-module DATASHEET

SK120KQ16 ELECTRICAL SPECIFICATIONS

 

Type: SCR-module

Maximum repetitive peak and off-state voltage (VDRM): 1600 V

Maximum RMS on-state current (IT(RMS)): 134 A

Non repetitive surge peak on-state current (ITSM): 2000 A

Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs

Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C

Junction to case thermal resistance (RTH(j-c)): 0.45 K/W

Triggering gate voltage (VGT): 2 V

Peak on-state voltage drop (VTM): 1.85 V

Triggering gate current (IGT): 100 mA

Holding current (IH): 100 mA

 

SK120KQ16 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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SK120KQ16 Datasheet

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SK120KQ16
 datasheet

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SK120KQ16
 datasheet #2

Description

SK 120 KQ Symbol Conditions Values Units SEMITOP® 2 Antiparallel Thyristor Module SK 120 KQ

 
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