All Transistors. SCR. SKKH58-16E Datasheet

 

SKKH58-16E SCR-module DATASHEET

SKKH58-16E ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 1400 V
   Maximum average on-state current (IT(AVR)): 70 A
   Maximum RMS on-state current (IT(RMS)): 125 A
   Non repetitive surge peak on-state current (ITSM): 1600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.39 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.9 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 150 mA

Package: SEMIPACK1

 

SKKH58-16E Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

SKKH58-16E Datasheet

Page #1

SKKH58-16E
 datasheet

Page #2

SKKH58-16E
 datasheet #2

Description

SKKH 58/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 55 A sinus 180° Tc =100°C 41 A ITSM Tj =25°C 1500 A 10 ms Tj =130°C 1200 A i2t Tj =25°C 11250 A²s 10 ms Tj =130°C 7200 A²s VRSM 1700 V SEMIPACK® 1 VRRM 1600 V VDRM 1600 V Thyristor / Diode Modules (di/dt)cr Tj = 130 °C 140 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Tj -40 ... 130 °C SKKH 58/16 E Module Tstg -40 ... 125 °C Features Visol 1min 3000 V a.c.; 50 Hz; r.m.s.

 
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