SKKT107-16E SCR-module DATASHEET
SKKT107-16E ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 122 A
Maximum RMS on-state current (IT(RMS)): 195 A
Non repetitive surge peak on-state current (ITSM): 3600 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.2 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 100 mA
Package: SEMIPACK2
SKKT107-16E Datasheet
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Description
SKKT 107/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 119 A sinus 180° Tc =100°C 91 A ITSM Tj =25°C 2250 A 10 ms Tj =130°C 1900 A i2t Tj =25°C 25313 A²s 10 ms Tj =130°C 18050 A²s VRSM 1700 V SEMIPACK® 1 VRRM 1600 V VDRM 1600 V Thyristor Modules (di/dt)cr Tj = 130 °C 140 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Tj -40 ... 130 °C SKKT 107/16 E Module Tstg -40 ... 125 °C Features Visol 1min 3000 V a.c.; 50 Hz; r.m.s. 1s
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |