All Transistors. SCR. SKKT57B16E Datasheet

 

SKKT57B16E SCR-module DATASHEET

SKKT57B16E ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 55 A
   Non repetitive surge peak on-state current (ITSM): 1500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 140 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..130 °C
   Junction to case thermal resistance (RTH(j-c)): 0.47 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 150 mA

Package: SEMIPACK1

 

SKKT57B16E Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

SKKT57B16E Datasheet

Page #1

SKKT57B16E
 datasheet

Page #2

SKKT57B16E
 datasheet #2

Description

SKKT 57, SKKH 57, SKKT 57B THYRISTOR Symbol Conditions Values Units SEMIPACK® 1 Thyristor / Diode Modules

 
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