SKKT58B16E SCR-module DATASHEET

SKKT58B16E ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1400 V
   Maximum average on-state current (I_T(AVR)): 70 A
   Maximum RMS on-state current (I_T(RMS)): 125 A
   Non repetitive surge peak on-state current (I_TSM): 1600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.39 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.9 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 150 mA

Package: SEMIPACK1

 

SKKT58B16E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SKKT58B16E Datasheet

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Description

SKKT 58B16 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 55 A sinus 180° Tc =100°C 41 A ITSM Tj =25°C 1500 A 10 ms Tj =130°C 1200 A i2t Tj =25°C 11250 A²s 10 ms Tj =130°C 7200 A²s VRSM 1700 V SEMIPACK® 1 VRRM 1600 V VDRM 1600 V Thyristor Modules (di/dt)cr Tj = 130 °C 140 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Tj -40 ... 130 °C SKKT 58B16 E Module Tstg -40 ... 125 °C Features Visol 1min 3000 V a.c.; 50 Hz; r.m.s. 1s •