SKUT115-12V2 SCR-module DATASHEET
SKUT115-12V2 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum RMS on-state current (IT(RMS)): 85 A
Non repetitive surge peak on-state current (ITSM): 1050 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.85 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 200 mA
Package: SEMIPONT5
SKUT115-12V2 Datasheet
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Description
SKUT 115/12 V2 Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Ts =25°C 127 A sinus 180° Ts =85°C 71 A ITSM Tj =25°C 1500 A 10 ms Tj =130°C 1250 A i2t Tj =25°C 11250 A²s 10 ms Tj =130°C 7813 A²s VRSM 1300 V SEMIPONT® 5 VRRM 1200 V VDRM 1200 V Three phase antiparallel (di/dt)cr Tj = 130 °C 50 A/µs thyristor module (dv/dt)cr Tj = 130 °C 500 V/µs Tj -40 ... 125 °C Module SKUT 115/12 V2 Tstg -40 ... 125 °C Visol 1min 3000 V ac; 50Hz;
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |