SM1G43 Triac DATASHEET
SM1G43 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 230 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 300 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.5 V
Triggering gate current (IGT): 30 mA
Holding current (IH): 60 mA
SM1G43 Datasheet
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Description
SM1G43,SM1J43 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM1G43,SM1J43 Unit: mm AC POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM = 400, 600V R.M.S On-State Current : I = 1A T (RMS) Higt Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM1G43 400 Repetitive Peak VDRM V Off-State Voltage SM1J43 600 R.M.S On-State Current IT (RMS) 1.0 A (Full Sine Waveform Tc = 74°C) 8 (50Hz) Peak One Cycle S
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |