SM25GZ51 Triac DATASHEET

SM25GZ51 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 55 K/W
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 10 mA

Package: TO‑220F

 

SM25GZ51 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SM25GZ51 Datasheet

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Description

SM25GZ51,SM25JZ51 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 Unit: mm AC POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM = 400, 600V R.M.S On-State Current : I = 25A T (RMS) High Commutating (dv / dt) : (dv / dt) c = 10V / µs Isolation Voltage : VIsol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM25GZ51 400 Repetitive Peak VDRM V Off-State Voltage SM25JZ51 600 R.M.S On-State Current