All Transistors. SCR. SM25GZ51 Datasheet

 

SM25GZ51 Triac DATASHEET

SM25GZ51 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 3 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 2 A
   Non repetitive surge peak on-state current (ITSM): 8 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 55 K/W
   Triggering gate voltage (VGT): 1 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 10 mA

Package: TO‑220F

 

SM25GZ51 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

SM25GZ51 Datasheet

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SM25GZ51
 datasheet

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SM25GZ51
 datasheet #2

Description

SM25GZ51,SM25JZ51 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 Unit: mm AC POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM = 400, 600V R.M.S On-State Current : I = 25A T (RMS) High Commutating (dv / dt) : (dv / dt) c = 10V / µs Isolation Voltage : VIsol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM25GZ51 400 Repetitive Peak VDRM V Off-State Voltage SM25JZ51 600 R.M.S On-State Current

 
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