All Transistors. SCR. SM2GZ47 Datasheet

 

SM2GZ47 Triac DATASHEET

SM2GZ47 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 3 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 2 A
   Non repetitive surge peak on-state current (ITSM): 8 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 55 K/W
   Triggering gate voltage (VGT): 1 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 10 mA

Package: TO‑220F

 

SM2GZ47 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

SM2GZ47 Datasheet

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SM2GZ47
 datasheet

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SM2GZ47
 datasheet #2

Description

SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A AC POWER CONTROL APPLICATIONS Unit: mm I = 1A (Ta = 65°C without radiator) T (RMS) Gate Trigger Current : IGT = 5mA Max. (TYPE “A”) Repetitive Peak Off-State Voltage : V = 400V, 600V DRM R.M.S On-State Current : I = 2A (Tc = 110°C) T (RMS) Isolation Voltage : VISOL = 1500V (AC, t = 60s) MAXIMUM RATINGS CHARACTERISTIC SYMBOL

 
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