SM2GZ47 Triac DATASHEET
SM2GZ47 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 2 A
Non repetitive surge peak on-state current (ITSM): 8 A
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 55 K/W
Triggering gate voltage (VGT): 1 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 10 mA
Package: TO‑220F
SM2GZ47 Datasheet
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Description
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A AC POWER CONTROL APPLICATIONS Unit: mm I = 1A (Ta = 65°C without radiator) T (RMS) Gate Trigger Current : IGT = 5mA Max. (TYPE “A”) Repetitive Peak Off-State Voltage : V = 400V, 600V DRM R.M.S On-State Current : I = 2A (Tc = 110°C) T (RMS) Isolation Voltage : VISOL = 1500V (AC, t = 60s) MAXIMUM RATINGS CHARACTERISTIC SYMBOL
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |