SM2GZ47A Triac Spec

SM2GZ47A ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 58 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 10 mA

Package: TO‑220F

 

SM2GZ47A Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SM2GZ47A Spec

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Description

SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A AC POWER CONTROL APPLICATIONS Unit: mm I = 1A (Ta = 65°C without radiator) T (RMS) Gate Trigger Current : IGT = 5mA Max. (TYPE “A”) Repetitive Peak Off-State Voltage : V = 400V, 600V DRM R.M.S On-State Current : I = 2A (Tc = 110°C) T (RMS) Isolation Voltage : VISOL = 1500V (AC, t = 60s) MAXIMUM RATINGS CHARACTERISTIC SYMBOL