SM8GZ47 Triac DATASHEET

SM8GZ47 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 3.6 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 20 mA
   Holding current (I_H): 50 mA

Package: 13‑10H1A

 

SM8GZ47 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

SM8GZ47 Datasheet

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Description

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off-State Voltage : VDRM = 400, 600V R.M.S ON-State Current : I = 8A T (RMS) High Commutating (dv / dt) Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM8GZ47 400 SM8GZ47A Repetitive Peak VDRM V Off-State Voltage SM8JZ47 600 SM8J