STN1A60 SCR-module DATASHEET

STN1A60 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 100 A
   Maximum RMS on-state current (I_T(RMS)): 180 A
   Non repetitive surge peak on-state current (I_TSM): 1700 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.22 K/W

 

STN1A60 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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STN1A60 Datasheet

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Description

STN1A60 Logic Level Logic Level Logic Level Logic Level Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Features Features Features Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(I =1A T(RMS) ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDR M=500uA@ TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation