All Transistors. SCR. STT165GK18 Datasheet

 

STT165GK18 SCR-module DATASHEET

STT165GK18 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 181 A
   Maximum RMS on-state current (IT(RMS)): 300 A
   Non repetitive surge peak on-state current (ITSM): 6000 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.15 K/W

 

STT165GK18 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

STT165GK18 Datasheet

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STT165GK18
 datasheet

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STT165GK18
 datasheet #2

Description

STT165GKxxB Thyristor-Thyristor Modules Colerance:+0.5mm - Type VRSM VRRM Dimensions in mm (1mm=0.0394") VDSM VDRM V V STT165GK08B 900 800 STT165GK12B 1300 1200 STT165GK14B 1500 1400 STT165GK16B 1700 1600 STT165GK18B 1900 1800 STT165GK20B 2100 2000 STT165GK22B 2300 2200 Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS TVJ=TVJM 259 A ITAVM, IFAVM TC=85oC; 180o sine 165 TVJ=45oC t=10ms (50Hz), sine 6000 VR=0 t=8.3ms (60Hz), sine 6400 ITSM, IFSM A TVJ=TVJM t=10ms(50

 
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