All Transistors. SCR. STT800GK08 Datasheet

 

STT800GK08 SCR-module DATASHEET

STT800GK08 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 800 A
   Maximum RMS on-state current (IT(RMS)): 1256 A
   Non repetitive surge peak on-state current (ITSM): 30000 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..140 °C
   Junction to case thermal resistance (RTH(j-c)): 0.04 K/W

 

STT800GK08 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

STT800GK08 Datasheet

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STT800GK08
 datasheet

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STT800GK08
 datasheet #2

Description

STT800GKXXPT Thyristor-Thyristor Modules Colerance:+0.5mm - Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STT800GK08PT 900 800 STT800GK12PT 1300 1200 STT800GK14PT 1500 1400 STT800GK16PT 1700 1600 STT800GK18PT 1900 1800 Symbol Test Conditions Maximum Ratings Unit A ITAV TC=85oC; 180o half sine wave,50HZ 800 1256 ITRMS TC=85oC; 180o Full cycle sine wave,50HZ A TVJ=TVJM 180o half sine wave,50HZ single pulse; 30.0 ITSM T =25oC VR=0; 35.0 C A 2 Gate pulse;20V,

 
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