STT800GK12 SCR-module DATASHEET

STT800GK12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1800 V
   Maximum average on-state current (I_T(AVR)): 800 A
   Maximum RMS on-state current (I_T(RMS)): 1256 A
   Non repetitive surge peak on-state current (I_TSM): 30000 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..140 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.04 K/W

 

STT800GK12 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

STT800GK12 Datasheet

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Description

STT800GKXXPT Thyristor-Thyristor Modules Colerance:+0.5mm - Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STT800GK08PT 900 800 STT800GK12PT 1300 1200 STT800GK14PT 1500 1400 STT800GK16PT 1700 1600 STT800GK18PT 1900 1800 Symbol Test Conditions Maximum Ratings Unit A ITAV TC=85oC; 180o half sine wave,50HZ 800 1256 ITRMS TC=85oC; 180o Full cycle sine wave,50HZ A TVJ=TVJM 180o half sine wave,50HZ single pulse; 30.0 ITSM T =25oC VR=0; 35.0 C A 2 Gate pulse;20V,