STU4A60 SCR DATASHEET
STU4A60 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1000 V
Maximum average on-state current (IT(AVR)): 6.4 A
Maximum RMS on-state current (IT(RMS)): 10 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 1 mA
Holding current (IH): 30 mA
Package: TO‑220AB
STU4A60 Datasheet
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Description
STU4A60 Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ ITM) ◆ High Commutation dv/dt General Description Sensitive gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic A1 A1 A1 A1 functions, low power AC
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |