All Transistors. SCR. STYN808S Datasheet

 

STYN808S SCR DATASHEET

STYN808S ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 8 A
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 140 A
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 2 mA
   Holding current (IH): 30 mA

Package: TO‑220AB

 

STYN808S Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

STYN808S Datasheet

Page #1

STYN808S
 datasheet

Page #2

STYN808S
 datasheet #2

Description

STYN208(S) thru STYN1008(S) Discrete Thyristors(SCRs) Dim. Inches Milimeter Dimensions TO-220AB Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 B 0.580 0.630 14.73 16.00 C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 A E 0.230 0.270 5.85 6.85 K F 0.100 0.125 2.54 3.18 A G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC G M 0.170 0.190 4.32 4.82 N 0.045 0.055 1.14 1.39 K Q 0.014 0.022 0.35 0.56 R 0.090 0.110 2.29 2.79 Dimens

 
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